Localized Ligand Induced Electroless Plating (LIEP) Process for the Fabrication of Copper Patterns Onto Flexible Polymer Substrates

The “ligand induced electroless plating (LIEP) process” is a simple process to obtain localized metal plating onto flexible polymers such as poly(ethylene terephtalate) and polyvinylidene fluoride sheets. This generic and cost‐effective process, efficient on any common polymer surface, is based on the covalent grafting by the GraftFast process of a thin chelating polymer film, such as poly(acrylic acid), which can complex copper ions. The entrapped copper ions are then chemically reduced in situ and the resulting Cu⁰ species act as a seed layer for the electroless copper growth which, thus, starts inside the host polymer. The present work focuses on the application of the LIEP process to the patterning of localized metallic tracks via two simple lithographic methods. The first is based on a standard photolithography process using a positive photoresist masking to prevent the covalent grafting of PAA in designated areas of the polymer substrate. In the second, the patterning is performed by direct printing of the mask with a commercial laser printer. In both cases, the mask was lifted off before the copper electroless plating step, which provides ecological benefits, since only the amount of copper necessary for the metallic patterning is used.     

铁粉法与甲醛法在石墨粉表面化学镀铜的工艺对比

研究比较了两种化学方法--铁粉法和甲醛法在石墨粉表面镀铜的工艺.结果表明:铁粉法使用混合表面活性剂对石墨粉预处理,40～60 ℃搅拌下缓慢加入镀液,在pH为1.5～2.0下镀覆15～20 min,50 ℃干燥可以制备出含铜25%～75%、镀覆效果好的镀铜石墨粉;甲醛法要求对石墨粉敏化、活化、工艺复杂、成本高、副反应产物具有毒性,且铜含量较低的试样镀覆效果不如铁粉法制备的试样.铁粉法镀覆效果好、工艺简单、无毒,列为首选方法.     

Structural and Passivative Behaviors of Cu(In) Thin Film

This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form In₂O₃/Cu/SiO₂ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an In₂O₃ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of In₂O₃/Cu/SiO₂ improved the resistivity, adhesion to SiO₂, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits.     

超细铜粉的化学镀锡及其抗氧化性能研究

以水合肼还原法制备出平均粒径约1μm的超细铜粉,并对其进行化学镀锡。研究了镀锡层对复合粉末微观形貌及抗氧化性能的影响。结果表明:镀覆质量分数50%的锡后,复合粉末平均粒径有所减小,但在空气中的氧化起始温度从120℃提高到220℃,与镀银层相比,镀锡层在较低温度区间对铜粉抗氧化具有优势。     

光子晶体应用于在浓度检测上的模拟研究

采用平面波展开法数值计算了对二维光子晶体在TE和TM偏振态下的带隙进行了计算,给出了光子晶体中的禁带存在的理论依据,选择二维三角晶格光子晶体(GaAs)作为基底,在空气孔内填充浓度(质量百分浓度)为一定的待测溶液硫酸铜材料,通过计算得到了温度为298K情况下介电常数在71.917-62.530变化时,待测浓度的对应关系,并由此得到液体填充的光子晶体在不同偏振模式下光子禁带结构.结果表明,以硫酸铜的水溶液作为空气圆孔中的介质材料,当溶液质量百分浓度不同时光子带隙(PBG)发生变化。这对溶液浓度检测应用方面有一定的指导作用。     

注入锁定铜蒸气激光器的时空、能量以及偏振特性

采用P分量的偏振光注入到平行平面腔的铜蒸气激光器中,结果表明,与未加注入光时的振荡器比较,注入锁定铜蒸气激光器的输出功率提高了43％,P分量的偏振度从0.30提高到0.78,脉宽由36ns加宽到48ns,输出光的发散角显著改善,由7.8mrad降到1.1mrad,与注入光束基本相同。     

湾坝河水电站软基加固中的振冲施工技术

湾坝河水电站闸基坐落在第四纪砂砾石覆盖层上，属于软基上建闸。为了确保闸坝基础能满足坝基稳定、承载、变形的要求，设计上采用了振冲法对覆盖层进行加固处理。该工程振冲加固技术的施工方法、技术措施、质量控制措施可供类似工程参考。     

可控源音频大地电磁法在凡口铅锌矿中的应用

凡口矿接替资源勘查项目重点在于矿区深部和外围隐伏矿体的勘探,可控源音频大地电磁法（CSAMT）的应用是矿山多种地球物理方法研究中的一种。由于矿区存在严重的人文干扰因素,音频大地电磁法（AMT）对于较深部的地质特征不容易分辨出来,CSAMT较好地解决了这个问题。在无有效的地质剖面的前提下,通过使用GDP--32U在测区成矿靶区布置的4条CSAMT实验剖面,进行物探异常的定性分类解释和地质推断来设计钻孔。截止目前13个钻孔的勘探结果,90％的钻孔均有不同厚度（1～14）m的铅锌铜矿体,初见效果,拓展了矿区深部勘查手段的思路。     

自生复合Cu-Cr合金定向凝固新方法

简述了高强度高导电性铜合金的制备方法．指出,基于热型连铸工艺制备具有定向凝固组织的Cu-Cr合金自生复合材料由于充分利用铜基体的导电和第二相Cr纤维强化的作用,因而具有比较好的综合性能,具有广阔的应用前景．     

杂质离子对铜沉积微观结构的影响

为揭示杂质离子在铜电结晶过程中的行为,提高电解铜的质量,模拟电解铜厂的生产条件,用XPS、XRD、SEM等仪器研究了电解液中As5+、Sb3+、Bi3+、Fe2+、Fe3+、Ni2+、Zn2+等杂质离子对铜沉积微观结构的影响.结果表明:当电流密度i≤220A/m2时,杂质离子不在阴极沉积,但抑制其他晶面的生长,使铜结晶的(220)晶面织构系数明显增大,晶胞尺寸变大,电结晶形态由脊状变为脊状混块状;当i>220A/m2时,杂质中砷离子与铋离子在阴极有少量沉积,沉积层中砷以As和As2O3形式并存,铋以Bi2O3形式存在,铜结晶的颗粒变粗;当电流密度增至800A/m2时,杂质离子会使铜结晶的晶面择优取向从(220)变为(111).